Formation of single-phase crystalline and amorphous high-entropy ZrTiTaMoWNi thin films under near-equilibrium condensation conditions

Using magnetron sputtering of a segmented target in high-purity argon, this study investigates how the formation mechanisms of Zr–Ti–Ta–Mo–W–Ni high-entropy thin films depend on process parameters such as sputtering power P w , substrate temperature T c , and Ni concentration. At Ni concentrations of 8–15 at% and low vapor supersaturation levels (P w =15 W, T c =280–500 °C), structurally stable and chemically uniform high-entropy amorphous coatings are formed. Transmission electron microscopy (TEM) investigations have shown that the crystallization of the amorphous coatings occurs in the form of a single bcc phase at an annealing temperature of 800°C. Furthermore, it has been shown that at T c = 440°C, Pw = 15 W, and reduced Ni content (∼3 at%), the bcc crystals preferentially nucleate and grow as nano-patterns aligned parallel to the (310) plane. Additionally, amorphous coatings demonstrate increased resistance to 4.8 MeV/u Au ion irradiation at a fluence of 5 × 10 ¹ ³ ions/cm², indicating their suitability as radiation-resistant protective layers. • Single-phase bcc HEA films have been obtained by means of DC magnetron sputtering. • Depending on technological parameters, amorphous and crystalline layers can be formed. • The crystalline layers have morphology in the form of nanopatterns. • The amorphous layers crystallize into bcc phase at annealing temperature 800 C. • Irradiation resistance has been studied for the amorphous and crystalline films.