Accurate Analysis of Switching Transients in the High-Frequency, Integrated Dual-Path Step-Down DC-DC Converter

This paper presents an analytical methodology for characterizing the primary waveforms during switching transients in an inductive switching cell, and for assessing the corresponding switching losses. The proposed technique is applied to the hybrid Dual-Path Step-Down topology, which is particularly suitable for integration and for high-frequency applications. The analytical results of the model are validated through transistorlevel simulation on a realistic design based on a 130 nm CMOS technology, demonstrating a high degree of accuracy in the analytical predictions. In fact, despite evaluating a broad design space and an extended operating range, the introduced relative error is, on average, only 4.6%, never exceeding 9.1%.