SiGe BiCMOS Process Design Kit for Cryogenic High-Frequency Applications

Cryogenic process design kits (PDKs) are essential for advancing the design of integrated circuits operating at extremely low temperatures, particularly at high-frequencies. This work presents the development and validation of a PDK for a 0.13 μm SiGe BiCMOS process that includes cryogenic models for MOSFETs, heterojunction bipolar transistors (HBTs), and polysilicon resistors. Each component has been characterized at both room temperature and cryogenic temperatures at 4 K to ensure accurate performance prediction. The PDK incorporates modifications to address key phenomena such as tunneling currents and temperature-dependent effects for HBTs, as well as non-linear resistance behavior for polysilicon resistors. Validation was performed by measuring a variety of monolithically integrated circuits including CMOS and HBT ring oscillators, HBT low-noise amplifiers. All fabricated ICs were tested at cryogenic temperatures and compared with simulation. The results confirm the accuracy and reliability of the PDK, supporting its application in cryogenic electronic systems and advancing the capabilities of high-frequency SiGe BiCMOS technology.