One Time Programmable Memory for Light Powered ASICs

Many autonomously powered system-on-chip applications require a non-volatile memory. Although there are different types, not all are suitable for low-power. As a promising candidate, the one time programmable memory, using a MOSFET’s gate oxide as anti-fuse, requires currents in the lower micro-ampere range and around 7 V for programming in most 180 nm technologies, and is therefore a good match for the target application. This paper presents a new one time programmable memory structure, addressing the challenges of an integrated energy harvesting supply based on photodiodes. Light-induced leakage in the parasitic photodiodes of the access transistor is expected to result in high voltage drops and sufficient current for unintended programming of adjacent, unselected cells. The design targets a 180 nm SOI technology, allowing for voltages up to 10 V.