High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers (Adv. Electron. Mater. 19/2025)
GeSn Quantum Wells The GeSn quantum well with Ge barriers sits in the background, while the GeSn quantum well with ordered SiGeSn barriers is in the foreground. Short-range atomic order in the SiGeSn barriers may enable the improved carrier mobility, visualized by the increased density of charge transport lines flowing through that material. Bloch spheres in the background represent quantum information science applications. More information can be found in the Research Article by Christopher R. Allemang, David Lidsky, and co-workers (10.1002/aelm.202400460).
Authors
- Christopher Allemang (ORCID: https://orcid.org/0000-0001-8712-0782)
- David Lidsky (ORCID: https://orcid.org/0000-0003-4681-9831)
- Peter Sharma (ORCID: https://orcid.org/0000-0002-3071-7382)
- Jifeng Liu (ORCID: https://orcid.org/0000-0003-4379-2928)
- Shui-Qing Yu (ORCID: https://orcid.org/0000-0002-4439-3729)
- Tzu‐Ming Lu (ORCID: https://orcid.org/0000-0002-3363-1226)
- Yunsheng Qiu (ORCID: https://orcid.org/0000-0001-5614-2022)
Institutions
- Dartmouth College (US)
- University of New Mexico (US)
- Sandia National Laboratories (US)
- Center for Integrated Nanotechnologies (US)
- University of Arkansas at Fayetteville (US)
Publication Details
- Journal
- Advanced Electronic Materials
- Published
- 2025-11-01
- DOI
- https://doi.org/10.1002/aelm.70157
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00