Physical Characterization of Cu2basns4 Thin Films Deposited At DifferentConcentrations of Sulfur Ions by Chemical Spray Pyrolysis Method

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Journal
Academic Science Journal
Published
2025-10-01
DOI
https://doi.org/10.24237/asj.03.04.922c
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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article

Physical Characterization of Cu2basns4 Thin Films Deposited At DifferentConcentrations of Sulfur Ions by Chemical Spray Pyrolysis Method

Nabeel A. Bakr, Azni Zain Ahmed, Hamsa J. Ata
Academic Science Journal
Chalcogenide Semiconductor Thin Films
article

Physical Characterization of Cu2basns4 Thin Films Deposited At DifferentConcentrations of Sulfur Ions by Chemical Spray Pyrolysis Method

Nabeel A. Bakr, Azni Zain Ahmed, Hamsa J. Ata
article en

Abstract

No abstract available for this paper.
Academic Science JournalVol. 3(4)
University of Diyala (IQ)
Openalex Percentile: Top 66%
Chalcogenide Semiconductor Thin Films
DOIOpen Access PDFOpenAlex
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Physical Characterization of Cu2basns4 Thin Films Deposited At DifferentConcentrations of Sulfur Ions by Chemical Spray Pyrolysis Method — Nabeel A. Bakr, Azni Zain Ahmed, et al. · Academic Science Journal (2025) | TGRS Research Map | TGRS