A Hodgkin-Huxley Interpretation of Power Amplifiers Memory Effects in Stochastic Computing

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Published
2025-12-14
DOI
https://doi.org/10.1109/mapcon65020.2025.11426536
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
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article

A Hodgkin-Huxley Interpretation of Power Amplifiers Memory Effects in Stochastic Computing

Shipra Shipra, Aziz Benlarbi‐Delaï, Siqi Wang, Yifei Gao
Ferroelectric and Negative Capacitance Devices
article

A Hodgkin-Huxley Interpretation of Power Amplifiers Memory Effects in Stochastic Computing

Shipra Shipra, Aziz Benlarbi‐Delaï, Siqi Wang, Yifei Gao
article en

Abstract

No abstract available for this paper.
Shimane University (JP), Laboratoire de Génie Électrique et Électronique de Paris (FR), Sorbonne Université (FR), Chalmers University of Technology (SE)
Sorbonne Université
Openalex Percentile: Top 66%
Ferroelectric and Negative Capacitance Devices
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