High-performance single-crystal copper growth technology for volume manufacturing

Single-crystal copper (SCC) has become a critical material for high-performance electronic, thermal, and mechanical applications due to its excellent physical properties. However, scalable production of high-performance SCC remains a significant challenge. In this work, we report a novel, high-efficiency approach for the rapid growth of large-size SCC using an optimized Czochralski (CZ) method. By introducing a high-flow-rate cold argon gas system and precise thermal gradient control, we achieved a record crystal size of φ108×270 mm and a growth rate of 67.5 mm/h, surpassing previously reported CZ-based growth rates by more than twentyfold. Comprehensive structural characterization confirms the [220]-oriented single-crystal nature with exceptional orientation uniformity and atomic-scale integrity. The resulting SCC exhibits ultra-high purity (99.99995%), high electrical conductivity (106.68% IACS), and excellent mechanical ductility (elongation ∼104.4%). This work provides a scalable and cost-effective route for the industrial-grade production of SCC and offers a foundational strategy for its integration into advanced electronics, communication, and functional device manufacturing.