Multiphysics Approach to Reliability Prediction of Integrated Circuits Due to Radiation Induced Failures

The continuous advancement in semiconductor technology has led to a reduction in device operating and threshold voltages, rendering integrated circuits increasingly vulnerable to particle radiation effects. Concurrently, the shrinking process sizes have exacerbated charge sharing effects, elevating soft errors induced by single event effects to a primary cause of circuit failures. To address this challenge, we present a multiphysics workflow that enables robust sensitivity evaluation of integrated circuits under radiation-induced stress. This paper presents a comprehensive approach to evaluating the radiation-induced vulnerability of semiconductor components in aerospace and defense applications. As the miniaturization of integrated circuits continues, traditional netlist-based analyses have become insufficient for accurately assessing the impact of single event effects (SEEs). We introduce a novel reduced order modeling (ROM) framework that couples TCAD-level device simulations with system-level reliability estimation and using CRÈME96 environment model. The ROM is trained using datasets generated from Design of Experiments (DOE) runs conducted through TCAD simulations, spanning the full LET domain and validated against published cross-section data.