One-Step Wet Chemical Treatment for Fluxless Cu-Sn Thermocompression Microbump Bonding
A new one-step wet chemical treatment has been developed for fluxless Cu-Sn microbump bonding. This treatment simultaneously removes native oxide from the Cu surface and deposits a functional layer on the cleaned surface. The treatment passivates the surface against re-oxidation and activates it for thermocompression bonding (TCB) between Cu and Sn without applying a flux agent. This paper discusses oxide layer removal from the Cu surface and the stability of the formed functional layer for up to 45 weeks. Die-to-die (D2D) microbump bonding was also evaluated through conductivity tests after thermal stress. Additionally, the uniformity of the layer formation on a 300-mm wafer-level application was assessed using dipping and spinning methods.
Authors
- Itsuro Tomatsu
- Kyoko Shimizu (ORCID: https://orcid.org/0000-0003-1221-0315)
- Ryo Negishi
- Satoshi Saito (ORCID: https://orcid.org/0000-0003-4249-0178)
Institutions
- MEI Research (United States) (US)
Publication Details
- Journal
- IMAPSource Proceedings
- Published
- 2025-11-10
- DOI
- https://doi.org/10.4071/001c.147286
- Primary Topic
- Electronic Packaging and Soldering Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00