One-Step Wet Chemical Treatment for Fluxless Cu-Sn Thermocompression Microbump Bonding

A new one-step wet chemical treatment has been developed for fluxless Cu-Sn microbump bonding. This treatment simultaneously removes native oxide from the Cu surface and deposits a functional layer on the cleaned surface. The treatment passivates the surface against re-oxidation and activates it for thermocompression bonding (TCB) between Cu and Sn without applying a flux agent. This paper discusses oxide layer removal from the Cu surface and the stability of the formed functional layer for up to 45 weeks. Die-to-die (D2D) microbump bonding was also evaluated through conductivity tests after thermal stress. Additionally, the uniformity of the layer formation on a 300-mm wafer-level application was assessed using dipping and spinning methods.

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Publication Details

Journal
IMAPSource Proceedings
Published
2025-11-10
DOI
https://doi.org/10.4071/001c.147286
Primary Topic
Electronic Packaging and Soldering Technologies
Type
article
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article

One-Step Wet Chemical Treatment for Fluxless Cu-Sn Thermocompression Microbump Bonding

Itsuro Tomatsu, Kyoko Shimizu, Ryo Negishi, Satoshi Saito
IMAPSource Proceedings
Electronic Packaging and Soldering Technologies
article

One-Step Wet Chemical Treatment for Fluxless Cu-Sn Thermocompression Microbump Bonding

Itsuro Tomatsu, Kyoko Shimizu, Ryo Negishi, Satoshi Saito
article en

Abstract

A new one-step wet chemical treatment has been developed for fluxless Cu-Sn microbump bonding. This treatment simultaneously removes native oxide from the Cu surface and deposits a functional layer on the cleaned surface. The treatment passivates the surface against re-oxidation and activates it for thermocompression bonding (TCB) between Cu and Sn without applying a flux agent. This paper discusses oxide layer removal from the Cu surface and the stability of the formed functional layer for up to 45 weeks. Die-to-die (D2D) microbump bonding was also evaluated through conductivity tests after thermal stress. Additionally, the uniformity of the layer formation on a 300-mm wafer-level application was assessed using dipping and spinning methods.

IMAPSource ProceedingsVol. 2025(Symposium)
MEI Research (United States) (US)
Openalex Percentile: Top 66%
Electronic Packaging and Soldering Technologies
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