On the origin of carrier loss in Mg-doped N-polar GaN
The neutral (VN-3MgGa)0 complex was found to be the primary compensator in Mg-doped N-polar GaN. The experimental data showed a sharp drop in hole concentration once [Mg] exceeded ∼1019 cm−3. Temperature-dependent Hall measurements, in conjunction with a charge balance model, revealed that the carrier loss was due to a drastic reduction in acceptor concentration (NA), suggesting that a significant fraction of Mg atoms was incorporated in an electrically neutral configuration. A quantitative semi-empirical model based on the grand canonical formalism pointed to the formation of (VN-3MgGa)0 complexes as the primary cause for the observed carrier loss.
Authors
- Pramod Reddy (ORCID: https://orcid.org/0000-0002-8556-1178)
- Seiji Mita (ORCID: https://orcid.org/0009-0002-8312-107X)
- Ronny Kirste (ORCID: https://orcid.org/0000-0002-2596-4450)
- Masahiro Kamiyama (ORCID: https://orcid.org/0009-0001-9601-6394)
- Cristyan Quiñones-García (ORCID: https://orcid.org/0000-0001-9270-3747)
- Dolar Khachariya (ORCID: https://orcid.org/0000-0002-8780-4583)
- Zlatko Sitar (ORCID: https://orcid.org/0000-0002-7385-0837)
- Shashwat Rathkanthiwar (ORCID: https://orcid.org/0000-0003-0180-1398)
- Ramón Collazo (ORCID: https://orcid.org/0000-0002-5229-3824)
Institutions
- North Carolina State University (US)
- Adroit Materials (United States) (US)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-12-15
- DOI
- https://doi.org/10.1063/5.0282677
- Citations
- 1
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.26