Mechanistic insights into the reaction behavior of LaMnO3 oxygen carrier material with sulfur species

Perovskite-structured LaMnO 3 has emerged as a potential oxygen carrier material for chemical looping applications because of its remarkable properties. However, the presence of H 2 S in practical chemical looping combustion systems induces sulfur poisoning through surface sulfidation, significantly compromising the performance and durability of oxygen carrier materials. To elucidate the fundamental mechanisms underlying this deactivation process, we performed systematic density functional theory method to investigate the atomic-level interactions between sulfur species (H 2 S, HS and S) and the LaMnO 3 surface. The result shows that the Mn-terminated surface demonstrating better reactivity and thermodynamic stability compared to its La-terminated surface. Thermodynamic analysis confirms the adsorption affinity trend of S > HS > H 2 S upon LaMnO 3 . The elementary step of HS* + * → S* + H* acts as the rate-determining process in H 2 S decomposition, whose activation energy barrier is 0.53 eV. The liberated hydrogen atoms subsequently undergo recombination with surface oxygen species, resulting in the formation of gaseous H 2 O ( E a = 0.80 eV). Notably, the oxidative conversion of adsorbed sulfur species to SO 2 proceeds with significantly lower energy barriers ( E a = 0.80 eV), indicating preferential SO 2 generation compared to H 2 O formation during surface reactions. This reactivity disparity stems from crystallographic-dependent variations in atomic coordination geometry, which substantially influences the electronic structure. • The sulfur-related reactions over the LaMnO 3 0 1 0 surface are explored. • HS* + * → S* + H* is the rate-determining step in H 2 S dissociation over LaMnO 3 surface. • The adsorption intensities of dissociated sulfur species, especially S*, are quite high. • In the CLC with perovskite, the decomposition of H 2 S should be avoided to control sulfur. • Kinetically, it is much easier to form SO 2 than to form H 2 O over the LaMnO 3 surface.

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Publication Details

Journal
Separation and Purification Technology
Published
2025-11-16
DOI
https://doi.org/10.1016/j.seppur.2025.135997
Primary Topic
Chemical Looping and Thermochemical Processes
Type
article
Field-Weighted Citation Impact
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article

Mechanistic insights into the reaction behavior of LaMnO3 oxygen carrier material with sulfur species

Laihong Shen, Xin Liu, Zuojun Li, Lei Wang et al.
Separation and Purification Technology
Chemical Looping and Thermochemical Processes
article

Mechanistic insights into the reaction behavior of LaMnO3 oxygen carrier material with sulfur species

Laihong Shen, Xin Liu, Zuojun Li, Lei Wang, Yu Li, Jie Chen, Cheng Shen
article en

Abstract

Perovskite-structured LaMnO 3 has emerged as a potential oxygen carrier material for chemical looping applications because of its remarkable properties. However, the presence of H 2 S in practical chemical looping combustion systems induces sulfur poisoning through surface sulfidation, significantly compromising the performance and durability of oxygen carrier materials. To elucidate the fundamental mechanisms underlying this deactivation process, we performed systematic density functional theory method to investigate the atomic-level interactions between sulfur species (H 2 S, HS and S) and the LaMnO 3 surface. The result shows that the Mn-terminated surface demonstrating better reactivity and thermodynamic stability compared to its La-terminated surface. Thermodynamic analysis confirms the adsorption affinity trend of S > HS > H 2 S upon LaMnO 3 . The elementary step of HS* + * → S* + H* acts as the rate-determining process in H 2 S decomposition, whose activation energy barrier is 0.53 eV. The liberated hydrogen atoms subsequently undergo recombination with surface oxygen species, resulting in the formation of gaseous H 2 O ( E a = 0.80 eV). Notably, the oxidative conversion of adsorbed sulfur species to SO 2 proceeds with significantly lower energy barriers ( E a = 0.80 eV), indicating preferential SO 2 generation compared to H 2 O formation during surface reactions. This reactivity disparity stems from crystallographic-dependent variations in atomic coordination geometry, which substantially influences the electronic structure. • The sulfur-related reactions over the LaMnO 3 0 1 0 surface are explored. • HS* + * → S* + H* is the rate-determining step in H 2 S dissociation over LaMnO 3 surface. • The adsorption intensities of dissociated sulfur species, especially S*, are quite high. • In the CLC with perovskite, the decomposition of H 2 S should be avoided to control sulfur. • Kinetically, it is much easier to form SO 2 than to form H 2 O over the LaMnO 3 surface.

Separation and Purification TechnologyVol. 382
Ministry of Education (RO), Jiangsu University of Science and Technology (CN), Wenzhou-Kean University (CN)
Openalex Percentile: Top 66%
Chemical Looping and Thermochemical Processes
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