A 5-7 GHz BiCMOS Front-End Module for WiFi 6e with 2.2 dB NF and 16 dBm PAVG at −40 dB EVM

This work presents a fully integrated low noise and high linearity integrated Front-End Module (FEM) for WiFi 6/6e applications implemented in a 130 nm SiGe BiCMOS technology. The bipolar low noise amplifier (LNA) and power amplifier (PA) are connected to an integrated CMOS SPDT switch. The FEM covers the entire <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$5-7 \text{GHz}$</tex> (U-NII 1-8) WiFi 6/6e band and is capable of providing <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$16 \text{dBm} \mathrm{P}_{\text{AVG }}$</tex> at −40 dB EVM and 6.5% PAE with an 802.11 ax 80 MHz MCS11 input signal. The receiver path shows a noise figure (NF) lower than 2.2 dB, an in-band gain higher than 15.5 dB and an input-referred 1 dB compression point (IP1dB) of −12 dBm.