High-Power and Low-Noise AlN/GaN/AlGaN-on-Si HEMT Technology for Low-Voltage mm-Wave Monolithically Integrated Mobile Front-End

This work demonstrates an AlN/GaN/AlGaN-on-Si high electron mobility transistor (HEMT) technology that achieves simultaneous high performance in both power and noise. At 30 GHz, the proposed transistor with a <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt;0.1 \mu ~\mathrm{m}$</tex> T-gate achieves a saturated output power <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\left(\boldsymbol{P}_{\text {sat }}\right)$</tex> of 1W/mm in pulse mode, a peak power-added efficiency (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$P A E$</tex>) exceeding 30%, and a minimum noise figure (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$N F_{\min }$</tex>) of 1.54 dB with an associated gain (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$G_{a}$</tex>) of 9.11 dB at 6 V. The results highlight the strong potential of the proposed technology for monolithically integrated front-end modules (FEMs) in low-voltage mm-wave mobile applications.