S-Band 600 W Power Amplifier MMIC in 0.5 μm GaN High Voltage Technology
An integrated S-band high power amplifier is demonstrated in a 100 V full-MMIC GaN-on-SiC technology. The high breakdown voltage of this technology results in a high output power density with very good efficiency. This potential is utilized though the design of a power amplifier with low loss matching networks and carefully implemented stability margins. The discussed amplifier delivers a maximum output power of 600 W at a PAE of more than 60 % under pulsed conditions.
Authors
- M. van Heijningen (ORCID: https://orcid.org/0000-0001-5190-5537)
- Sebastian Krause
- A.P. de Hek
- G. van der Bent (ORCID: https://orcid.org/0000-0002-3846-1932)
- F.E. van Vliet
Institutions
- Fraunhofer Institute for Applied Solid State Physics (DE)
- Applied Radar (United States) (US)
Publication Details
- Published
- 2025-09-22
- DOI
- https://doi.org/10.23919/eumic65284.2025.11234422
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00