Investigation of ZnMgO/µc-Si thin-film solar cell using two-dimensional numerical simulation
The development of efficient microcrystalline silicon (µc-Si) thin-film solar cells offers a promising route to reduce photovoltaic costs. This work presents, for the first time, a comprehensive numerical model to optimize ZnMgO/µc-Si-based solar cells by analyzing its performance metrics. The model incorporates horizontal and vertical grain boundaries (GBs) in the absorber with Gaussian-distributed donor- and acceptor-like trap states. Key parameters studied are Mg concentration, thickness, and doping in the ZnMgO emitter, as well as GB-induced recombination in the µc-Si absorber. Results show that increasing Mg concentration up to 20% significantly enhances performance, while higher concentrations yield negligible improvement. GB recombination critically affects performance: smaller grain size, which increases GB density, causes exponential degradation, and GB trap densities above 10<sup>11</sup> cm<sup>- 2</sup> lead to a sharp decline in metrics. The ZnMgO emitter exhibits optimal performance at ~ 100 nm thickness and ~ 5 × 10<sup>16</sup> cm<sup>- 3</sup> doping. A maximum efficiency of ~ 14.3% is achieved with 20% Mg, 100 nm thickness, 5 × 10<sup>16</sup> cm<sup>- 3</sup> doping in ZnMgO, and an absorber containing 10 GBs with trap density of 10<sup>11</sup> cm<sup>- 2</sup>. The model is validated against previously reported results.
Authors
- Muzaffar Imam (ORCID: https://orcid.org/0000-0001-8202-1005)
- Mukul K. Das (ORCID: https://orcid.org/0000-0003-1583-6145)
- Syed Sadique Anwer Askari (ORCID: https://orcid.org/0000-0003-1562-0969)
- M. S. AHMAD (ORCID: https://orcid.org/0000-0002-3996-796X)
- Paramjit Kaur (ORCID: https://orcid.org/0000-0002-9639-3069)
Institutions
- Galgotias University (IN)
- Presidency University (IN)
- Indian Institute of Technology Dhanbad (IN)
- Sant Longowal Institute of Engineering and Technology (IN)
- Manipal University Jaipur
Publication Details
- Journal
- Scientific Reports
- Published
- 2025-11-13
- DOI
- https://doi.org/10.1038/s41598-025-23415-y
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00