A 39 GHz Phase Shifter in 28 nm FD-SOI CMOS Technology for mm-Wave Wireless Communications

This paper presents a 0–360° phase shifter in 28 nm FD-SOI CMOS technology, suitable for radar applications and mm-wave wireless communication systems, which adopt high-efficiency transmitter architectures. It exploits a novel switching vector modulator based on a double-balanced Gilbert cell, which guarantees high-resolution phase control while exhibiting inherently high robustness against process and temperature variations. The phase control is performed by merely changing the currents in the Gilbert cells using digitally controlled current generators. The proposed phase shifter operates at 39 GHz and provides RMS phase and gain errors of 2.7–4.7° and 0.3–0.5 dB, respectively, while drawing 13 mA from a 1 V supply voltage.

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Publication Details

Journal
Electronics
Published
2025-11-13
DOI
https://doi.org/10.3390/electronics14224433
Primary Topic
Radio Frequency Integrated Circuit Design
Type
article
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article

A 39 GHz Phase Shifter in 28 nm FD-SOI CMOS Technology for mm-Wave Wireless Communications

Alessandro Parisi, Alessandro Finocchiaro, G. Palmisano, Giuseppe Papotto et al.
Electronics
Radio Frequency Integrated Circuit Design
article

A 39 GHz Phase Shifter in 28 nm FD-SOI CMOS Technology for mm-Wave Wireless Communications

Alessandro Parisi, Alessandro Finocchiaro, G. Palmisano, Giuseppe Papotto, Alessandro Castorina, Alessandro Domenico Minnella
article en

Abstract

This paper presents a 0–360° phase shifter in 28 nm FD-SOI CMOS technology, suitable for radar applications and mm-wave wireless communication systems, which adopt high-efficiency transmitter architectures. It exploits a novel switching vector modulator based on a double-balanced Gilbert cell, which guarantees high-resolution phase control while exhibiting inherently high robustness against process and temperature variations. The phase control is performed by merely changing the currents in the Gilbert cells using digitally controlled current generators. The proposed phase shifter operates at 39 GHz and provides RMS phase and gain errors of 2.7–4.7° and 0.3–0.5 dB, respectively, while drawing 13 mA from a 1 V supply voltage.

ElectronicsVol. 14(22)
University of Catania (IT), STMicroelectronics (Italy) (IT)
Openalex Percentile: Top 66%
Radio Frequency Integrated Circuit Design
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