Structure and optoelectrical properties of Cu-poor and Zn-rich CZTS films processed by the compaction of aqueous-synthesized nanoparticles

Abstract Cu-poor and Zn-rich Cu 2 ZnSnS 4 nanoparticles (NPs) with sizes between 5 and 10 nm and single kesterite phase were synthesized by a glycine-assisted aqueous solution process. Cu 2 ZnSnS 4 films were deposited on Mo foils by a process involving printing of NP-based inks by blade coating, hydraulic compaction, and annealing at 500 °C in Ar atmosphere. The analysis of crystalline structure confirmed that the resulting films had the kesterite- Cu 2 ZnSnS 4 phase. Moreover, the hydraulic compaction applied to the ink-coated substrates promoted the formation of crack-free films with enhanced crystallinity and reduced porosity. The optical band gap of these films was found in the range of 1.44 to 1.5 eV. Although there was a reduction in thickness from 4.14 to 1.44 µm with increasing hydraulic compaction from 500 to 800 MPa, the final Cu 2 ZnSnS 4 film exhibited an improvement in photoresponse evidenced by a moderate increase in current under both dark and lighting conditions related to a greater number of conductive grains in contact (due to increased film densification), creating more paths for electrons and thus reducing overall resistance.

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Publication Details

Journal
Journal of Materials Science Materials in Electronics
Published
2025-11-01
DOI
https://doi.org/10.1007/s10854-025-16157-0
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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article

Structure and optoelectrical properties of Cu-poor and Zn-rich CZTS films processed by the compaction of aqueous-synthesized nanoparticles

Luis A. González, David Ramírez-Ceja
Journal of Materials Science Materials in Electronics
Chalcogenide Semiconductor Thin Films
article

Structure and optoelectrical properties of Cu-poor and Zn-rich CZTS films processed by the compaction of aqueous-synthesized nanoparticles

Luis A. González, David Ramírez-Ceja
article en

Abstract

Abstract Cu-poor and Zn-rich Cu 2 ZnSnS 4 nanoparticles (NPs) with sizes between 5 and 10 nm and single kesterite phase were synthesized by a glycine-assisted aqueous solution process. Cu 2 ZnSnS 4 films were deposited on Mo foils by a process involving printing of NP-based inks by blade coating, hydraulic compaction, and annealing at 500 °C in Ar atmosphere. The analysis of crystalline structure confirmed that the resulting films had the kesterite- Cu 2 ZnSnS 4 phase. Moreover, the hydraulic compaction applied to the ink-coated substrates promoted the formation of crack-free films with enhanced crystallinity and reduced porosity. The optical band gap of these films was found in the range of 1.44 to 1.5 eV. Although there was a reduction in thickness from 4.14 to 1.44 µm with increasing hydraulic compaction from 500 to 800 MPa, the final Cu 2 ZnSnS 4 film exhibited an improvement in photoresponse evidenced by a moderate increase in current under both dark and lighting conditions related to a greater number of conductive grains in contact (due to increased film densification), creating more paths for electrons and thus reducing overall resistance.

Journal of Materials Science Materials in ElectronicsVol. 36(32)
Instituto Politécnico Nacional (MX)
Openalex Percentile: Top 66%
Chalcogenide Semiconductor Thin Films
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