A Stretchable Kirigami‐Inspired Temperature Sensor Based on Sc‐Doped In ₂ O ₃ Field‐Effect Transistor

Abstract Stretchable temperature sensors are indispensable in wearable intelligent sensing systems due to their ability to accommodate the shape and motion characteristics of the human body. However, developing temperature sensors with both high sensitivity and strain‐insensitive temperature sensing remains a persistent challenge. Herein, the Sc‐doped In 2 O 3 field‐effect transistor (InScO FET) is introduced into a Kirigami structure to realize temperature sensing with both high thermal sensitivity (4% °C −1 ) and strain‐insensitivity. The Kirigami‐inspired FET (Ki‐FET) shows excellent recovery of its electrical properties following 1000 cycles of stretch‐release at strains between 0% and 10%. Additionally, it functions reliably under tensile strain of up to 50%. This research presents an important step forward in improving the reliability and performance of the stretchable temperature sensor.