Air‐Stable Aluminum Tris[Bis(mesitoyl)Arsenide] Precursor for Metal Arsenide Quantum Dots

ABSTRACT Colloidal III–V arsenide quantum dots (QDs) are promising low‐toxicity, solution‐processable materials for near‐infrared optoelectronics, yet their development has been constrained by the scarcity of suitable precursors and proneness to oxidation. Existing routes either rely on highly reactive but toxic, pyrophoric group‐14‐substituted arsines, or on safer aminoarsines that require in situ reduction and cause staggered rather than a single burst nucleation. We introduce aluminum tris[bis(mesitoyl)arsenide] as a nonpyrophoric and air‐stable precursor that, upon nucleophilic attack, directly delivers the formally As 3− species. Using this precursor, we synthesized 2.3–4.6 nm large InAs QDs and 2–5.5 nm large Cd 3 As 2 QDs with photoluminescence tunable in the 800–2250 nm range. These results establish aluminum tris[bis(mesitoyl)arsenide] as a versatile precursor, enabling safe and controlled syntheses of various arsenide QDs.