Experimental Demonstration of Capacitive in‐Memory Computing Using Ferroelectric HZO Memcapacitors

Abstract Ferroelectric capacitors (Fe‐Caps) exhibiting memcapacitive behavior are emerging as a compelling platform for low‐power capacitive in‐memory computing (IMC). Their inherently open‐circuit nature suppresses static current and sneak paths, offering a distinct advantage over resistive IMC counterparts. In this work, an experimental demonstration is presented of a cross‐point Fe‐Cap array prototype, establishing capacitive IMC with non‐destructive readout characteristics. The devices exhibit robust reliability, sustaining more than 10 5 read cycles and 10 7 write cycles, with retention projected beyond 10 years without memory collapse. At the system level, a 4 × 2 array achieves 100% accuracy in 2‐pixel × 2‐pixel pattern‐recognition tasks, while scaling to a 16 × 4 array and letter‐recognition tasks highlights the outstanding scalability of Fe‐Cap‐based IMC platforms. These results not only validate the Fe‐Caps as both a functional and reliable IMC element but also provide an experimental framework for straightforward evaluation of IMC functionality, marking a milestone toward practical and energy‐efficient neuromorphic hardware.