Dynamic Characterization by Double Pulse Testing of Si Power MOSFETs and IGBTs at Cryogenic Temperature for Superconducting Applications

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SPIRE - Sciences Po Institutional REpository
Published
2025-09-21
Primary Topic
Silicon Carbide Semiconductor Technologies
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article
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article

Dynamic Characterization by Double Pulse Testing of Si Power MOSFETs and IGBTs at Cryogenic Temperature for Superconducting Applications

Yanis Laïb, Stéphane Raël, Jean Lévêque, Kévin Berger
SPIRE - Sciences Po Institutional REpository
Silicon Carbide Semiconductor Technologies
article

Dynamic Characterization by Double Pulse Testing of Si Power MOSFETs and IGBTs at Cryogenic Temperature for Superconducting Applications

Yanis Laïb, Stéphane Raël, Jean Lévêque, Kévin Berger
article en

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No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Groupe de Recherche en Énergie Électrique de Nancy (FR), Groupe de Recherche Clinique en Neuro-urologie (FR)
Openalex Percentile: Top 66%
Silicon Carbide Semiconductor Technologies
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Dynamic Characterization by Double Pulse Testing of Si Power MOSFETs and IGBTs at Cryogenic Temperature for Superconducting Applications — Yanis Laïb, Stéphane Raël, et al. · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS