Atomic Layer Etching of SiO<sub>2</sub> using CF<sub>4</sub> plasma in deposition mode at cryogenic temperature

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SPIRE - Sciences Po Institutional REpository
Published
2025-09-22
Primary Topic
Copper Interconnects and Reliability
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article
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article

Atomic Layer Etching of SiO2 using CF4 plasma in deposition mode at cryogenic temperature

Gilles Cunge, Sylvain Iséni, M. Kogelschatz, Rémi Dussart et al.
SPIRE - Sciences Po Institutional REpository
Copper Interconnects and Reliability
article

Atomic Layer Etching of SiO2 using CF4 plasma in deposition mode at cryogenic temperature

Gilles Cunge, Sylvain Iséni, M. Kogelschatz, Rémi Dussart, Loı̈c Becerra, E. Despiau-Pujo, Philippe Lefaucheux, Jack Nos, Thomas Tillocher, Madjib Adjabi
article en

Abstract

No abstract available for this paper.
SPIRE - Sciences Po Institutional REpository
Centre National de la Recherche Scientifique (FR), Laboratoire des Technologies de la Microélectronique (FR), Groupe de Recherches sur l'Energétique des Milieux Ionisés (FR)
Openalex Percentile: Top 76%
Copper Interconnects and Reliability
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