Breakdown of the quantum anomalous Hall effect under microwave drives

Quantum anomalous Hall (QAH) insulators exhibit chiral dissipationless edge states without an external magnetic field, making them a promising material for quantum metrology and microwave applications. However, the breakdown of the zero-resistance state at low currents hinders progress. We investigate and characterize this breakdown under microwave fields (1--25 GHz) by measuring the increase of longitudinal resistance in RF Hall bars and RF Corbino devices made from V-doped ${(\mathrm{Bi},\mathrm{Sb})}_{2}{\mathrm{Te}}_{3}$ films. Our results point to the role of heating of electron-hole puddles under microwave irradiation, thereby fostering hopping transport. Our work offers insights critical for GHz-range QAH applications.