Interband response of type-II quantum cascade detectors [Invited]

Quantum cascade detectors (QCDs) are room-temperature photovoltaic infrared devices based on intersubband transitions. In this work, we expand the mid-infrared QCD functionality by utilizing the interband (IB) transitions in the extractor region to realize a detector also in the short-wavelength infrared region of the electromagnetic spectrum. We investigate this scheme with simulations and characterization of the IB transitions in type-II InAs/AlSb QCD structures on GaSb substrates. We compare four different QCD devices with IB transitions between 1.83 µm and 2.33 µm. The measured peak responsivities at zero bias are 2.8 – 24.8 mA W -1 with specific detectivities between 2.56×10 7 – 1.68×10 8 Jones. A detailed analysis of the devices under an applied bias shows that the IB response increases up to 330 times at a bias of 1.0 V and 360 times at a bias of -1.0 V.

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Publication Details

Journal
Optical Materials Express
Published
2025-11-12
DOI
https://doi.org/10.1364/ome.578538
Citations
1
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
Field-Weighted Citation Impact
0.73
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article

Interband response of type-II quantum cascade detectors [Invited]

W. Schrenk, Miriam Giparakis, G. Strasser, Benedikt Schwarz et al.
1 citations
Optical Materials Express
Advanced Semiconductor Detectors and Materials
0.73
article

Interband response of type-II quantum cascade detectors [Invited]

W. Schrenk, Miriam Giparakis, G. Strasser, Benedikt Schwarz, Rolf Szedlak, Stefania Isceri, Andreas Windischhofer, A. M. Andrews
article en
1 citations

Abstract

Quantum cascade detectors (QCDs) are room-temperature photovoltaic infrared devices based on intersubband transitions. In this work, we expand the mid-infrared QCD functionality by utilizing the interband (IB) transitions in the extractor region to realize a detector also in the short-wavelength infrared region of the electromagnetic spectrum. We investigate this scheme with simulations and characterization of the IB transitions in type-II InAs/AlSb QCD structures on GaSb substrates. We compare four different QCD devices with IB transitions between 1.83 µm and 2.33 µm. The measured peak responsivities at zero bias are 2.8 – 24.8 mA W -1 with specific detectivities between 2.56×10 7 – 1.68×10 8 Jones. A detailed analysis of the devices under an applied bias shows that the IB response increases up to 330 times at a bias of 1.0 V and 360 times at a bias of -1.0 V.

Optical Materials ExpressVol. 16(2)
University of Vienna (AT), TU Wien (AT)
Openalex Percentile: Top 22%
Advanced Semiconductor Detectors and Materials
0.73
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Interband response of type-II quantum cascade detectors [Invited] — W. Schrenk, Miriam Giparakis, et al. · Optical Materials Express (2025) | TGRS Research Map | TGRS