UV-Engineered Oxygen Vacancies in MoOX Interlayers Enable 24.15% Efficiency for Crystalline Silicon Solar Cells

Molybdenum oxide (MoO_X) has been widely utilized as a hole transport layer (HTL) in crystalline silicon (<i>c</i>-Si) solar cells, owing to characteristics such as a wide bandgap and high work function. However, the relatively low conductivity of MoO_X films and their poor contact performance at the MoO_X-based hole-selective contact severely degrade device performance, particularly because they limit the fill factor (FF). Oxygen vacancies are of paramount importance in governing the conductivity of MoO_X films. In this work, MoO_X films were modified through ultraviolet irradiation (UV-MoO_X), resulting in MoO_X films with tunable oxygen vacancies. Compared to untreated MoO_X films, UV-MoO_X films contain a higher density of oxygen vacancies, leading to an enhancement in conductivity (2.124 × 10^-3 S/m). In addition, the UV-MoO_X rear contact exhibits excellent contact performance, with a contact resistance of 20.61 mΩ·cm², which is significantly lower than that of the untreated device. Consequently, the application of UV-MoO_X enables outstanding hole selectivity. The power conversion efficiency (PCE) of the solar cell with an n-Si/i-a-Si:H/UV-MoO_X/Ag rear contact reaches 24.15%, with an excellent FF of 84.82%.