Realization of a high Chern number quantum anomalous Hall effect in ferromagnetic monolayer NiAl <sub>2</sub> Se <sub>4</sub> from the 120° antiferromagnetic state <i>via</i> doping and strain regulations
The QAHE, characterized by Chern number C = 2, can be attained in tensile-strained monolayer NiAl 2 Se 4 when the hole-doping concentration is 1.0 holes per unit cell. This is promising for the experimental exploration of topological spintronics.
Authors
- Junwei Tong (ORCID: https://orcid.org/0000-0003-4670-9763)
- Yanzhao Wu (ORCID: https://orcid.org/0000-0001-8761-5486)
- Xiang Yin (ORCID: https://orcid.org/0000-0002-0317-2874)
- Li Deng (ORCID: https://orcid.org/0009-0007-0891-4295)
- Fei Wang (ORCID: https://orcid.org/0000-0002-3442-9396)
- Rafaqat Ali Khan (ORCID: https://orcid.org/0000-0003-2643-3077)
- Xianmin Zhang (ORCID: https://orcid.org/0000-0003-2076-8730)
Institutions
- Abbottabad University of Science and Technology (PK)
- Freie Universität Berlin (DE)
- Northeastern University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-11-14
- DOI
- https://doi.org/10.1039/d5tc03301b
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00