Ultralow Thermal Conductivity in Layered CuGe <sub>2</sub> Se <sub>3</sub>

Unraveling the relationship between thermodynamic factors, interatomic interactions, and electronic structure remains a crucial yet elusive challenge in the discovery of novel materials in solid-state (SS) chemistry. In the quest for new thermoelectric (TE) materials, we overcame that fundamental problem for the case of CuGe<sub>2</sub>Se<sub>3</sub>, whose synthesis, unique crystal structure, and transport properties are reported herein. The giant two-dimensional (2D) structure of CuGe<sub>2</sub>Se<sub>3</sub>, consisting of Se/(Cu─Ge)/Se and Se/(Ge─Ge)/Se slabs stacked along the c-axis, exhibits short Cu─Ge and Ge─Ge interactions, as evidenced by single-crystal X-ray diffraction (SCXRD) and SS NMR spectroscopic studies. These homopolar bonds might be surprising, as such interactions are rarely observed in group IV-chalcogenides. The compound is thermally stable up to ∼823 K. Transport properties measurements revealed a high Seebeck coefficient (∼373.6 µV·K<sup>-1</sup>) and ultralow thermal conductivity (∼0.35 W·m<sup>-1</sup>K<sup>-1</sup>) at 755 K, ascribed to its weak bonding interactions. We followed up with a theoretical analysis to gain insight into its structural peculiarities, focusing on vibrational properties and the nature of chemical bonding. The formation of Ge─Ge bonds is favored in light of the presence of multicenter bonds, which receive contributions from stereochemically non-active Ge lone pairs.

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Publication Details

Journal
Angewandte Chemie International Edition
Published
2025-11-12
DOI
https://doi.org/10.1002/anie.202509226
Citations
2
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
1.04
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article

Ultralow Thermal Conductivity in Layered CuGe 2 Se 3

Achintya Lakshan, Simon Steinberg, Jürgen Nuß, Igor Moudrakovski et al.
2 citations
Angewandte Chemie International Edition
Advanced Thermoelectric Materials and Devices
1.04
article

Ultralow Thermal Conductivity in Layered CuGe 2 Se 3

Achintya Lakshan, Simon Steinberg, Jürgen Nuß, Igor Moudrakovski, Partha P. Jana, Arnab Dutta
article en
2 citations

Abstract

Unraveling the relationship between thermodynamic factors, interatomic interactions, and electronic structure remains a crucial yet elusive challenge in the discovery of novel materials in solid-state (SS) chemistry. In the quest for new thermoelectric (TE) materials, we overcame that fundamental problem for the case of CuGe<sub>2</sub>Se<sub>3</sub>, whose synthesis, unique crystal structure, and transport properties are reported herein. The giant two-dimensional (2D) structure of CuGe<sub>2</sub>Se<sub>3</sub>, consisting of Se/(Cu─Ge)/Se and Se/(Ge─Ge)/Se slabs stacked along the c-axis, exhibits short Cu─Ge and Ge─Ge interactions, as evidenced by single-crystal X-ray diffraction (SCXRD) and SS NMR spectroscopic studies. These homopolar bonds might be surprising, as such interactions are rarely observed in group IV-chalcogenides. The compound is thermally stable up to ∼823 K. Transport properties measurements revealed a high Seebeck coefficient (∼373.6 µV·K<sup>-1</sup>) and ultralow thermal conductivity (∼0.35 W·m<sup>-1</sup>K<sup>-1</sup>) at 755 K, ascribed to its weak bonding interactions. We followed up with a theoretical analysis to gain insight into its structural peculiarities, focusing on vibrational properties and the nature of chemical bonding. The formation of Ge─Ge bonds is favored in light of the presence of multicenter bonds, which receive contributions from stereochemically non-active Ge lone pairs.

Angewandte Chemie International EditionVol. 64(51)
Indian Institute of Technology Kharagpur (IN), Max Planck Institute for Solid State Research (DE), RWTH Aachen University (DE)
Openalex Percentile: Top 21%
Advanced Thermoelectric Materials and Devices
1.04
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