Ultralow Thermal Conductivity in Layered CuGe <sub>2</sub> Se <sub>3</sub>
Unraveling the relationship between thermodynamic factors, interatomic interactions, and electronic structure remains a crucial yet elusive challenge in the discovery of novel materials in solid-state (SS) chemistry. In the quest for new thermoelectric (TE) materials, we overcame that fundamental problem for the case of CuGe<sub>2</sub>Se<sub>3</sub>, whose synthesis, unique crystal structure, and transport properties are reported herein. The giant two-dimensional (2D) structure of CuGe<sub>2</sub>Se<sub>3</sub>, consisting of Se/(Cu─Ge)/Se and Se/(Ge─Ge)/Se slabs stacked along the c-axis, exhibits short Cu─Ge and Ge─Ge interactions, as evidenced by single-crystal X-ray diffraction (SCXRD) and SS NMR spectroscopic studies. These homopolar bonds might be surprising, as such interactions are rarely observed in group IV-chalcogenides. The compound is thermally stable up to ∼823 K. Transport properties measurements revealed a high Seebeck coefficient (∼373.6 µV·K<sup>-1</sup>) and ultralow thermal conductivity (∼0.35 W·m<sup>-1</sup>K<sup>-1</sup>) at 755 K, ascribed to its weak bonding interactions. We followed up with a theoretical analysis to gain insight into its structural peculiarities, focusing on vibrational properties and the nature of chemical bonding. The formation of Ge─Ge bonds is favored in light of the presence of multicenter bonds, which receive contributions from stereochemically non-active Ge lone pairs.
Authors
- Achintya Lakshan (ORCID: https://orcid.org/0000-0002-6755-1574)
- Simon Steinberg (ORCID: https://orcid.org/0000-0001-8022-7018)
- Jürgen Nuß (ORCID: https://orcid.org/0000-0002-0679-0184)
- Igor Moudrakovski (ORCID: https://orcid.org/0000-0002-8919-4766)
- Partha P. Jana (ORCID: https://orcid.org/0000-0002-1348-4150)
- Arnab Dutta (ORCID: https://orcid.org/0000-0002-4748-049X)
Institutions
- Indian Institute of Technology Kharagpur (IN)
- Max Planck Institute for Solid State Research (DE)
- RWTH Aachen University (DE)
Publication Details
- Journal
- Angewandte Chemie International Edition
- Published
- 2025-11-12
- DOI
- https://doi.org/10.1002/anie.202509226
- Citations
- 2
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 1.04