Flexible Inorganic/Organic Memristor Based on W-Doped MoOx/Poly(methyl methacrylate) Heterostructure

Work investigates the doping of molybdenum oxide (MoO_x) with tungsten (W). The successful incorporation of W into the MoO_x lattice was confirmed through X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDS). Structural and optical analysis revealed the presence of oxygen vacancies within the W-MoO_x film, which are known to facilitate resistive switching (RS) in memristive devices. Based on this, a flexible memristor with the structure PET/ITO/W-MoO_x/polymethyl methacrylate (PMMA)/Al was fabricated. PMMA was strategically introduced between the W-MoO_x layer and the aluminum electrode to modulate interfacial properties that influence RS behavior. The W-MoO_x/PMMA-based memristor exhibited good resistive switching characteristics, with a memory window of approximately 12 and a retention time exceeding 2 × 10⁴ s, demonstrating a non-volatile memory behavior. In the high-resistance state (HRS), the conduction mechanism under higher applied voltages follows a space-charge-limited current (SCLC) model, indicating that the RS process is primarily governed by charge trapping and de-trapping at the interface. Overall, the consistent and robust switching performance of the W-MoO_x/PMMA heterostructure underlines its potential as a reliable functional layer for next-generation resistive random-access memory (ReRAM) devices.