Optimization of Coatings Materials of Cds/Snse Solar Cell Using Snte as Hole Transport Layer: An Overview of Different Recombination Mechanisms
In this work the authors analyze a CdS/SnSe solar cell using a SnTe as a hole transport layer. We analyzed the impact of the recombination mechanisms namely radiative, and Shockley–Read–Hall in the bulk and at the interfaces using SCAPS-1D software and the impact of SnSe and CdS layer thickness. Additionally, the effect of concentration of acceptors and bulk defects in SnTe and SnSe on the performance were studied. The conditions that optimize device performance are presented. The results of the present study suggest that using a SnTe hole transport layer can result in an efficiency promotion from 0.7% to 24.48%.
Authors
- I. Montoya De Los Santos (ORCID: https://orcid.org/0000-0003-3664-1881)
- Levy Noé Inzunza Camacho (ORCID: https://orcid.org/0000-0001-5327-429X)
- A. Carrillo-Osuna (ORCID: https://orcid.org/0000-0002-9977-6276)
- Maykel Courel (ORCID: https://orcid.org/0000-0001-9149-3506)
- José P. Ruelas-Leyva (ORCID: https://orcid.org/0000-0002-5667-2602)
- S. Meza-Aguilar (ORCID: https://orcid.org/0000-0002-2622-3689)
- F. Ramos‐Brito (ORCID: https://orcid.org/0000-0001-6355-1895)
- F. J. Sánchez Rodríguez (ORCID: https://orcid.org/0000-0003-2503-1586)
- Jesus J. Molina-Duarte
- José G. Ojeda-Inzunza
- Andres Barraza-Valencia
Institutions
- Universidad de Guadalajara (MX)
- Universidad Autónoma de Sinaloa (MX)
Publication Details
- Journal
- Coatings
- Published
- 2025-11-12
- DOI
- https://doi.org/10.3390/coatings15111324
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Universiteit Gent