Controlled Arrangement of Liquid Crystal Molecules on SiO ₂ Film Nanopatterns Using UV Nanoimprint Lithography

ABSTRACT This study explores the fabrication of SiO 2 nanopatterned thin films using UV nanoimprint lithography (UV‐NIL) to enhance electrical properties. Optimization of UV irradiation time was critical, with 7 min identified as the optimal duration, ensuring superior nanopattern replication, minimal defects, and improved residual charge characteristics. X‐ray photoelectron spectroscopy revealed an increase in O1s peak intensity with extended UV exposure, indicating that UV irradiation promotes C–O bond formation, thereby enhancing the material's catalytic activity and electronic properties. Atomic force microscopy provided 2D and 3D imaging, confirming high‐fidelity pattern replication, which was further supported by line profile analysis. Additionally, polarized optical microscopy demonstrated uniform liquid crystal alignment on the film, enabling precise light control. These results underscore the potential of SiO 2 alignment films fabricated via UV‐NIL with a 7‐min UV exposure for future display technologies.