Growth of tetragonal PtO by molecular-beam epitaxy and its integration into β-Ga2O3 Schottky diodes

We demonstrate the epitaxial growth of tetragonal platinum monoxide (PtO) on MgO, TiO2, and β-Ga2O3 single-crystalline substrates by ozone molecular-beam epitaxy. We provide synthesis routes and derive a growth diagram under which PtO films can be synthesized by physical vapor deposition. A combination of electrical transport and photoemission spectroscopy measurements, in conjunction with density functional theory calculations, reveal PtO to be a degenerately doped p-type semiconductor with a bandgap of Eg ≈ 1.6 eV. Spectroscopic ellipsometry measurements are used to extract the complex dielectric function spectra, indicating a transition from free-carrier absorption to higher photon energy transitions at E ≈ 1.6 eV. Using tetragonal PtO as an anode contact, we fabricate prototype Schottky diodes on n-type Sn-doped β-Ga2O3 substrates and extract Schottky barrier heights of ϕB > 2.2 eV.

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Publication Details

Journal
APL Materials
Published
2025-11-01
DOI
https://doi.org/10.1063/5.0274229
Citations
1
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.43

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article

Growth of tetragonal PtO by molecular-beam epitaxy and its integration into β-Ga2O3 Schottky diodes

Indra Subedi, Kyeongjae Cho, Peter A. van Aken, C. T. Parzyck et al.
1 citations
APL Materials
Ga2O3 and related materials
0.43
article

Growth of tetragonal PtO by molecular-beam epitaxy and its integration into β-Ga2O3 Schottky diodes

Indra Subedi, Kyeongjae Cho, Peter A. van Aken, C. T. Parzyck, Debdeep Jena, Kathy Azizie, L. Kalaydjian, Nikolas J. Podraza, Huili Grace Xing, Darrell G. Schlom, Y. Eren Suyolcu, Qi Song, Felix V. E. Hensling, Patrick Vogt, Kyle Shen, Abdullah Al Mamun, Bennett J. Cromer, Jisung Park
article en
1 citations

Abstract

We demonstrate the epitaxial growth of tetragonal platinum monoxide (PtO) on MgO, TiO2, and β-Ga2O3 single-crystalline substrates by ozone molecular-beam epitaxy. We provide synthesis routes and derive a growth diagram under which PtO films can be synthesized by physical vapor deposition. A combination of electrical transport and photoemission spectroscopy measurements, in conjunction with density functional theory calculations, reveal PtO to be a degenerately doped p-type semiconductor with a bandgap of Eg ≈ 1.6 eV. Spectroscopic ellipsometry measurements are used to extract the complex dielectric function spectra, indicating a transition from free-carrier absorption to higher photon energy transitions at E ≈ 1.6 eV. Using tetragonal PtO as an anode contact, we fabricate prototype Schottky diodes on n-type Sn-doped β-Ga2O3 substrates and extract Schottky barrier heights of ϕB > 2.2 eV.

APL MaterialsVol. 13(11)
The University of Texas at Dallas (US), Cornell University (US), Laboratoire de physique des Solides (FR), SLAC National Accelerator Laboratory (US), Max Planck Institute for Solid State Research (DE), Center for Nanoscale Science and Technology (US), Leibniz Institute for Crystal Growth (DE), New York State College of Veterinary Medicine (US), University of Toledo (US)
National Science Foundation, Cornell Center for Materials Research, Materials Research Science and Engineering Center, Harvard University, Division of Materials Research, Air Force Office of Scientific Research, Air Force Research Laboratory
Openalex Percentile: Top 34%
Ga2O3 and related materials
0.43
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