Luttinger-compensated bipolarized magnetic semiconductor

Altermagnetic materials, with real-space antiferromagnetic arrangement and reciprocal-space anisotropic spin splitting, have attracted much attention. However, the spin splitting is small in most altermagnetic materials, which is a disadvantage to their application in electronic devices. In this study, based on symmetry analysis and the first-principles electronic structure calculations, we predict two Luttinger compensated bipolarized magnetic semiconductors $\mathrm{Mn}{(\mathrm{CN})}_{2}$ and $\mathrm{Co}{(\mathrm{CN})}_{2}$ with $s$-wave spin splitting as in the ferromagnetic materials. Our further analysis shows that the Luttinger compensated magnetism here depends not only on spin group symmetry, but also on the crystal field splitting and the number of $d$-orbital electrons. In addition, the polarized charge density indicates that both $\mathrm{Mn}{(\mathrm{CN})}_{2}$ and $\mathrm{Co}{(\mathrm{CN})}_{2}$ have the quasisymmetry $\mathrm{T}\ensuremath{\tau}$, resulting from the crystal field splitting and the number of $d$-orbital electrons. The Luttinger compensated magnetism not only has the zero total magnetic moment as the antiferromagnetism, but also has the $s$-wave spin splitting as the ferromagnetism, thus our work not only provides theoretical guidance for searching Luttinger compensated magnetic materials with distinctive properties, but also provides a material basis for the application in spintronic devices.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2025-11-13
DOI
https://doi.org/10.1103/9syc-71w8
Citations
2
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
2.49
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article

Luttinger-compensated bipolarized magnetic semiconductor

Huan-Cheng Yang, Xiao-Yao Hou, Zhong-Yi Lu, Ze-Feng Gao et al.
2 citations
Physical review. B./Physical review. B
Magnetic properties of thin films
2.49
article

Luttinger-compensated bipolarized magnetic semiconductor

Huan-Cheng Yang, Xiao-Yao Hou, Zhong-Yi Lu, Ze-Feng Gao, Wei Ji, Peng‐Jie Guo
article en
2 citations

Abstract

Altermagnetic materials, with real-space antiferromagnetic arrangement and reciprocal-space anisotropic spin splitting, have attracted much attention. However, the spin splitting is small in most altermagnetic materials, which is a disadvantage to their application in electronic devices. In this study, based on symmetry analysis and the first-principles electronic structure calculations, we predict two Luttinger compensated bipolarized magnetic semiconductors $\mathrm{Mn}{(\mathrm{CN})}_{2}$ and $\mathrm{Co}{(\mathrm{CN})}_{2}$ with $s$-wave spin splitting as in the ferromagnetic materials. Our further analysis shows that the Luttinger compensated magnetism here depends not only on spin group symmetry, but also on the crystal field splitting and the number of $d$-orbital electrons. In addition, the polarized charge density indicates that both $\mathrm{Mn}{(\mathrm{CN})}_{2}$ and $\mathrm{Co}{(\mathrm{CN})}_{2}$ have the quasisymmetry $\mathrm{T}\ensuremath{\tau}$, resulting from the crystal field splitting and the number of $d$-orbital electrons. The Luttinger compensated magnetism not only has the zero total magnetic moment as the antiferromagnetism, but also has the $s$-wave spin splitting as the ferromagnetism, thus our work not only provides theoretical guidance for searching Luttinger compensated magnetic materials with distinctive properties, but also provides a material basis for the application in spintronic devices.

Physical review. B./Physical review. BVol. 112(18)
Hefei University (CN), Renmin University of China (CN)
Openalex Percentile: Top 9%
Magnetic properties of thin films
2.49
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Luttinger-compensated bipolarized magnetic semiconductor — Huan-Cheng Yang, Xiao-Yao Hou, et al. · Physical review. B./Physical review. B (2025) | TGRS Research Map | TGRS