Performance investigation of 1T1R memory cell using GAA MBC-FET technology

The ultimate advancement beyond FinFET technology is the Gate-All-Around (GAA) Multi-Bridge-Channel FET (MBCFET) technology. GAA MBCFET features vertically stacked multiple channels, a departure from single-channel designs, thereby enhancing overall device efficiency. This study explores four configurations (C1, C2, C3, and C4) of GAA MBCFET, where various channel arrangements are investigated. The impact of these channels on DC, RF/analog performance is analyzed, revealing that the GAA MBCFET device with four thin channels (C4) exhibits robust resistance to short channel effects (SCE) parameters, such as threshold voltage variation, Subthreshold Swing (SS), and Drain-Induced Barrier Lowering (DIBL). Moreover, the GAA MBCFET demonstrates superior RF and analog performance attributes, offering promising prospects for the design of RFIC circuits. The 1T1R memory cell implementation using GAA MBC-FET technology has been analyzed to observe the DC, transient analysis. This research suggests that the future integration of GAA MBCFETs holds the potential for significant enhancements in device performance, encompassing improved power efficiency, higher speeds, and overall superior capabilities. • The GAA MBCFET with four vertically stacked channels (C4 configuration) demonstrated significant improvements in key performance metrics. • On current ( I O N ) by 144.98%,transconductance ( G m ) by 130.67%, drain conductance ( G d ) by 143.97%. • DIBL improves by 14.49%, and quality factor by 80.23% respectively. • The GAA MBCFET-based 1T1R configuration achieved a 98.76% reduction in switching time. • It also shows 312.05% improvement in power consumption compared to traditional CMOS technology.