Optimizing New Generation of ALD Precursors and Annealing Conditions for Ferroelectric HZO for Enhanced Memory Performance

Hafnium-zirconium oxide-based metal-ferroelectric-metal capacitors were fabricated using a new generation of high temperature-based metal-organic precursors. The concentration of Hf : Zr was varied (1:1, 2:3, 3:2) to get ferroelectric thin films of 10 nm. These capacitors were annealed at different temperatures <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\left(650^{\circ} \mathrm{C}, 800^{\circ} \mathrm{C}\right)$</tex> and were characterized with material and electrical tests. The longterm reliability and stability measured by endurance and retention tests. The non-annealed <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1: 1 \&amp; 3: 2 \text{HZO}$</tex> showed good polarization switching characteristics with <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2 \mathrm{P}_{\mathrm{r}}$</tex> of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$32 \mu \mathrm{C} / \text{cm}^{2}$</tex> and <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$24 \mu \mathrm{C} / \text{cm}^{2}$</tex> at <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2.8 \text{MV} / \text{cm}$</tex> respectively. The non-annealed <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1: 1$</tex> HZO could switch for 10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> cycles without breakdown and could retain with 5% retention loss when extrapolated for 10 years.