Bottom gated in-plane selective area grown InSb nanowires on GaAs(111)B

Authors

Clément Barbot
L. Desplanque (ORCID: https://orcid.org/0000-0002-2197-4408)
Yves Deblock (ORCID: https://orcid.org/0000-0002-7050-1076)
Christophe Coinon (ORCID: https://orcid.org/0000-0002-7790-3393)
Philipp Ebert
B. Grandidier
Pierre Capiod (ORCID: https://orcid.org/0000-0001-7594-3888)
Thomas Hauet
Maxime Berthe (ORCID: https://orcid.org/0000-0002-3918-7111)
Qianqian Lan (ORCID: https://orcid.org/0000-0002-9215-4925)
Étienne Okada (ORCID: https://orcid.org/0000-0001-6571-5945)

Institutions

Centre National de la Recherche Scientifique (FR)
Centre de Recherche en Mathématiques de la Décision (FR)
Forschungszentrum Jülich (DE)
Université de Lille (FR)
Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
Université Polytechnique Hauts-de-France (FR)
École Centrale de Lille (FR)

Publication Details

Journal: SPIRE - Sciences Po Institutional REpository
Published: 2025-03-10
Primary Topic: Nanowire Synthesis and Applications
Type: article
Field-Weighted Citation Impact: 0.00

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article

Bottom gated in-plane selective area grown InSb nanowires on GaAs(111)B

Clément Barbot, L. Desplanque, Yves Deblock, Christophe Coinon et al.

Mar 10, 2025

SPIRE - Sciences Po Institutional REpository

Nanowire Synthesis and Applications

article

Bottom gated in-plane selective area grown InSb nanowires on GaAs(111)B

Clément Barbot, L. Desplanque, Yves Deblock, Christophe Coinon, Philipp Ebert, B. Grandidier, Pierre Capiod, Thomas Hauet, Maxime Berthe, Qianqian Lan, Étienne Okada

March 10, 2025article en

Abstract

No abstract available for this paper.

SPIRE - Sciences Po Institutional REpository

Centre National de la Recherche Scientifique (FR), Centre de Recherche en Mathématiques de la Décision (FR), Forschungszentrum Jülich (DE), Université de Lille (FR), Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR), Université Polytechnique Hauts-de-France (FR), École Centrale de Lille (FR)

Openalex Percentile: Top 67%

Nanowire Synthesis and Applications

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Bottom gated in-plane selective area grown InSb nanowires on GaAs(111)B — Clément Barbot, L. Desplanque, et al. · SPIRE - Sciences Po Institutional REpository (2025) | TGRS Research Map | TGRS