Flexible orbital torque device with ultralow switching current

Orbital torque (OT) offers a highly efficient way for electrical magnetization manipulation. However, its potential in the emerging field of flexible spintronics remains largely unexplored. Here, we demonstrate a flexible and robust OT device based on a mica/SrRuO3(SRO)/CoPt heterostructure. We measure a large torque efficiency of −0.31, which originates from the significant orbital Hall effect in the SRO layer. Leveraging the low thermal conductivity of the mica substrate, a thermally assisted switching mechanism is activated, enabling an ultralow threshold current density of 9.2 × 109 A/m2. This value represents a 90% reduction compared to conventional spin torque devices and a 52% reduction against its rigid counterpart on a SrTiO3 substrate. The superior performance is well maintained after 103 bending cycles, confirming its exceptional flexibility and durability. Our work pioneers the development of flexible OT devices, showcasing a viable path toward next-generation, low-power wearable spintronic applications.

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Publication Details

Journal
Applied Physics Letters
Published
2025-11-10
DOI
https://doi.org/10.1063/5.0299096
Citations
2
Primary Topic
Heusler alloys: electronic and magnetic properties
Type
article
Field-Weighted Citation Impact
0.85
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article

Flexible orbital torque device with ultralow switching current

Liguang Gong, Bin Lao, Zhiming Wang, Run‐Wei Li et al.
2 citations
Applied Physics Letters
Heusler alloys: electronic and magnetic properties
0.85
article

Flexible orbital torque device with ultralow switching current

Liguang Gong, Bin Lao, Zhiming Wang, Run‐Wei Li, Jian Song
article en
2 citations

Abstract

Orbital torque (OT) offers a highly efficient way for electrical magnetization manipulation. However, its potential in the emerging field of flexible spintronics remains largely unexplored. Here, we demonstrate a flexible and robust OT device based on a mica/SrRuO3(SRO)/CoPt heterostructure. We measure a large torque efficiency of −0.31, which originates from the significant orbital Hall effect in the SRO layer. Leveraging the low thermal conductivity of the mica substrate, a thermally assisted switching mechanism is activated, enabling an ultralow threshold current density of 9.2 × 109 A/m2. This value represents a 90% reduction compared to conventional spin torque devices and a 52% reduction against its rigid counterpart on a SrTiO3 substrate. The superior performance is well maintained after 103 bending cycles, confirming its exceptional flexibility and durability. Our work pioneers the development of flexible OT devices, showcasing a viable path toward next-generation, low-power wearable spintronic applications.

Applied Physics LettersVol. 127(19)
University of Science and Technology of China (CN), Eastern Institute of Technology (NZ), Suzhou University of Science and Technology (CN), Wuhan Engineering Science & Technology Institute (CN), University of Chinese Academy of Sciences (CN), Ningbo Institute of Industrial Technology (CN), Eastern Institute of Technology, Ningbo
Openalex Percentile: Top 24%
Heusler alloys: electronic and magnetic properties
0.85
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Flexible orbital torque device with ultralow switching current — Liguang Gong, Bin Lao, et al. · Applied Physics Letters (2025) | TGRS Research Map | TGRS