Modeling and Analysis of Temperature-Dependent I–V Characteristics in Ti/6H-SiC Schottky Diodes

A theoretical model was developed by means of MATLAB software to analyze the temperature-dependent forward I–V characteristics of a Ti/6H-SiC (n) Schottky diode, focusing on fundamental current mechanisms such as thermionic emission and tunneling field emission. Measurements were conducted on three contact area of the M/S diode (1.6 × 1.6 mm2, 1.6 × 0.4 mm2, and 0.4 × 0.4 mm2) at temperatures from 77 to 500 K. The theoretical curves closely matched experimental data at 300 K and beyond, highlighting thermionic emission (TE) as the primary conduction mechanism. At a lower temperature, tunneling emerged as the dominant effect, resulting in a double-barrier phenomenon. Notably, the fitting for big diode is accomplished while medium and small diodes were found to be inadequate.