Influence of Sulfur Source on Growth of In-Air Sprayed Ultrathin Film Sb <sub>2</sub> S <sub>3</sub> for Enhanced Solar Cell Performance

Addressing the critical need for scalable and efficient production of high-quality antimony sulfide (Sb<sub>2</sub>S<sub>3</sub>) ultrathin films for next-generation solar cell technologies, this study introduces a novel, industrially scalable approach utilizing ultrasonic spray pyrolysis with antimony trichloride (SbCl<sub>3</sub>) and thiourea precursors. This contrasts sharply with record Sb<sub>2</sub>S<sub>3</sub> solar cells, often exceeding 200 nm and fabricated by using time-consuming chemical bath deposition, which presents challenges for tandem device integration. This work successfully fabricated high-quality 70 nm Sb<sub>2</sub>S<sub>3</sub> ultrathin films. Extensive characterization revealed that excess thiourea addition in the Sb:S 1:6 ratio significantly reduced the growth rate, crucial for achieving ultrathin films, while simultaneously improving stoichiometry, morphology, and carrier transport, resulting in more homogeneous films. Devices fabricated with these optimized films demonstrated a substantial fill factor improvement, reaching 62%, comparable to the best reported values for Sb<sub>2</sub>S<sub>3</sub> solar cells. This translated to a maximum power conversion efficiency of 5.3%. The films fabricated with the optimized thiourea addition in the Sb:S 1:6 ratio exhibited near-optimal stoichiometry, leading to a wider depletion width and improved device performance. This study proves the significance of precise precursor molar ratio control for high-quality ultrathin films, setting the stage for scalable Sb<sub>2</sub>S<sub>3</sub> solar cells and advancing solution-processed photovoltaic technologies.

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Publication Details

Journal
ACS Applied Materials & Interfaces
Published
2025-11-11
DOI
https://doi.org/10.1021/acsami.5c17869
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
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0.73
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article

Influence of Sulfur Source on Growth of In-Air Sprayed Ultrathin Film Sb 2 S 3 for Enhanced Solar Cell Performance

Nicolae Spalatu, Victoria Rotaru, Ernest A. Asare, Merike Kriisa et al.
1 citations
ACS Applied Materials & Interfaces
Chalcogenide Semiconductor Thin Films
0.73
article

Influence of Sulfur Source on Growth of In-Air Sprayed Ultrathin Film Sb 2 S 3 for Enhanced Solar Cell Performance

Nicolae Spalatu, Victoria Rotaru, Ernest A. Asare, Merike Kriisa, Ilona Oja Açik, David Payno, Edgardo Saucedo, Malle Krunks, Raitis Gržibovskis, Atanas Katerski, Maxim Guc, Raavo Josepson, Alejandro Navarro-Güell, Aivars Vembris, Alejandro Pérez‐Rodríguez
article en
1 citations

Abstract

Addressing the critical need for scalable and efficient production of high-quality antimony sulfide (Sb<sub>2</sub>S<sub>3</sub>) ultrathin films for next-generation solar cell technologies, this study introduces a novel, industrially scalable approach utilizing ultrasonic spray pyrolysis with antimony trichloride (SbCl<sub>3</sub>) and thiourea precursors. This contrasts sharply with record Sb<sub>2</sub>S<sub>3</sub> solar cells, often exceeding 200 nm and fabricated by using time-consuming chemical bath deposition, which presents challenges for tandem device integration. This work successfully fabricated high-quality 70 nm Sb<sub>2</sub>S<sub>3</sub> ultrathin films. Extensive characterization revealed that excess thiourea addition in the Sb:S 1:6 ratio significantly reduced the growth rate, crucial for achieving ultrathin films, while simultaneously improving stoichiometry, morphology, and carrier transport, resulting in more homogeneous films. Devices fabricated with these optimized films demonstrated a substantial fill factor improvement, reaching 62%, comparable to the best reported values for Sb<sub>2</sub>S<sub>3</sub> solar cells. This translated to a maximum power conversion efficiency of 5.3%. The films fabricated with the optimized thiourea addition in the Sb:S 1:6 ratio exhibited near-optimal stoichiometry, leading to a wider depletion width and improved device performance. This study proves the significance of precise precursor molar ratio control for high-quality ultrathin films, setting the stage for scalable Sb<sub>2</sub>S<sub>3</sub> solar cells and advancing solution-processed photovoltaic technologies.

ACS Applied Materials & InterfacesVol. 17(47)
Tallinn University of Technology (EE), Institut de Recerca en Energia de Catalunya (ES), Universitat de Barcelona (ES), University of Latvia (LV), Universitat Politècnica de Catalunya (ES)
Openalex Percentile: Top 22%
Chalcogenide Semiconductor Thin Films
0.73
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