Strategic tuning of precursor's concentration for the synthesis of Sb <sub>2</sub> S <sub>3</sub> thin films with enlarged nanocrystals and <i>hk</i> 1-oriented growth, leading to superior optical properties

Antimony trisulfide (Sb<sub>2</sub>S<sub>3</sub>) has acquired significant attention due to its non-toxic nature, durability, abundance, and superior opto-electronic properties, making it a promising candidate for various applications in optoelectronics and photovoltaics. It is important to focus on achieving the desired crystal morphology and preferred growth (<i>hk</i>1-oriented), as these can potentially result in superior optical properties. Moreover, surface morphology and stoichiometric ratio of the fabricated films also play a significant role. Even after conducting intensive research to address these factors, there remains immense research scope to enhance these properties. In this study, we present a strategically optimized precursor concentration for solution-based synthesis of Sb<sub>2</sub>S<sub>3</sub> thin films with large, compact, homogeneous nanocrystals, <i>hk</i>1-oriented preferential growth and superior optical properties, through a simple, cost-effective spin coating method. By varying the concentration of CS<sub>2</sub> (source of sulphur), an enhanced precursor solution was synthesized, which yielded the desirable crystal dimensions, <i>hk</i>1-oriented growth and optical properties. In this research work, we demonstrate the results of varying the concentration of CS<sub>2</sub> (from 1.5 ml to 3 ml with steps of 0.5 ml) and the effect it has on the overall structural and optical properties. The synthesized materials were characterized comprehensively using High-Resolution Transmission Electron Microscopy (HR-TEM), Bright-Field Transmission Electron Microscopy (BF-TEM), Selected Area Electron Diffraction (SAED), Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), and Variable Angle Spectroscopic Ellipsometry (VASE). Our experimental findings of BF-TEM, HR-TEM, SAED, and VASE conclude that the precursor solution consisting of 2.5 ml of CS<sub>2</sub> was able to generate enhanced nanocrystals, <i>hk</i>1-oriented growth and superior optical properties. The other measurements taken using the characterizing techniques agreed well with the findings of BF-TEM, HR-TEM, SAED, and VASE.

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Publication Details

Journal
Nanoscale Advances
Published
2025-11-12
DOI
https://doi.org/10.1039/d5na00901d
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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article

Strategic tuning of precursor's concentration for the synthesis of Sb 2 S 3 thin films with enlarged nanocrystals and hk 1-oriented growth, leading to superior optical properties

Md. Alauddin Hossain, M. Shimojo, K. Shirai
Nanoscale Advances
Chalcogenide Semiconductor Thin Films
article

Strategic tuning of precursor's concentration for the synthesis of Sb 2 S 3 thin films with enlarged nanocrystals and hk 1-oriented growth, leading to superior optical properties

Md. Alauddin Hossain, M. Shimojo, K. Shirai
article en

Abstract

Antimony trisulfide (Sb<sub>2</sub>S<sub>3</sub>) has acquired significant attention due to its non-toxic nature, durability, abundance, and superior opto-electronic properties, making it a promising candidate for various applications in optoelectronics and photovoltaics. It is important to focus on achieving the desired crystal morphology and preferred growth (<i>hk</i>1-oriented), as these can potentially result in superior optical properties. Moreover, surface morphology and stoichiometric ratio of the fabricated films also play a significant role. Even after conducting intensive research to address these factors, there remains immense research scope to enhance these properties. In this study, we present a strategically optimized precursor concentration for solution-based synthesis of Sb<sub>2</sub>S<sub>3</sub> thin films with large, compact, homogeneous nanocrystals, <i>hk</i>1-oriented preferential growth and superior optical properties, through a simple, cost-effective spin coating method. By varying the concentration of CS<sub>2</sub> (source of sulphur), an enhanced precursor solution was synthesized, which yielded the desirable crystal dimensions, <i>hk</i>1-oriented growth and optical properties. In this research work, we demonstrate the results of varying the concentration of CS<sub>2</sub> (from 1.5 ml to 3 ml with steps of 0.5 ml) and the effect it has on the overall structural and optical properties. The synthesized materials were characterized comprehensively using High-Resolution Transmission Electron Microscopy (HR-TEM), Bright-Field Transmission Electron Microscopy (BF-TEM), Selected Area Electron Diffraction (SAED), Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), and Variable Angle Spectroscopic Ellipsometry (VASE). Our experimental findings of BF-TEM, HR-TEM, SAED, and VASE conclude that the precursor solution consisting of 2.5 ml of CS<sub>2</sub> was able to generate enhanced nanocrystals, <i>hk</i>1-oriented growth and superior optical properties. The other measurements taken using the characterizing techniques agreed well with the findings of BF-TEM, HR-TEM, SAED, and VASE.

Nanoscale AdvancesVol. 8(3)
Hong Kong Polytechnic University (HK), Shibaura Institute of Technology (JP)
Openalex Percentile: Top 67%
Chalcogenide Semiconductor Thin Films
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