An Online Remaining Useful Life Prediction Method for Tantalum Capacitors Based on Temperature Measurements

Accurate remaining useful life (RUL) prediction of tantalum capacitors is essential for enhancing the reliability and maintainability of power electronic systems. However, online RUL prediction remains a challenging task due to the difficulty of accessing internal degradation states and the non-stationarity of operating conditions. This paper presents a novel CNN-LSTM-Attention-based deep learning framework for accurate online RUL prediction of tantalum capacitors, leveraging infrared surface temperature measurements and ambient thermal compensation. The proposed framework initiates with the collection of degradation temperature data under controlled accelerated aging experiments, where true degradation indicators are extracted by eliminating ambient temperature interference through dual-sensor compensation. The resulting preprocessed data are used to train a hybrid deep neural network model that integrates convolutional layers for local feature extraction, long short-term memory (LSTM) units for sequential dependency modeling, and a soft attention mechanism to selectively focus on the critical degradation patterns. A channel attention module is further embedded to adaptively optimize the importance of different feature channels. Experimental validation using three groups of aging data demonstrates the effectiveness and superiority of the proposed method over conventional LSTM and CNN-LSTM baselines. The CNN-LSTM-Attention model achieves a substantial improvement in prediction accuracy, with mean absolute percentage error (MAPE) reductions of up to 60.97%, root mean squared error (RMSE) reductions of up to 65.63%, and coefficient of determination (R2) increases of up to 68.67%. The results confirm the ability to deliver precise and robust online RUL predictions for tantalum capacitors under complex operational conditions.

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Publication Details

Journal
Electronics
Published
2025-11-11
DOI
https://doi.org/10.3390/electronics14224393
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

An Online Remaining Useful Life Prediction Method for Tantalum Capacitors Based on Temperature Measurements

Yanchi Chen, Quan Zhou, Zhixiong Huang, Guoming Li
Electronics
Silicon Carbide Semiconductor Technologies
article

An Online Remaining Useful Life Prediction Method for Tantalum Capacitors Based on Temperature Measurements

Yanchi Chen, Quan Zhou, Zhixiong Huang, Guoming Li
article en

Abstract

Accurate remaining useful life (RUL) prediction of tantalum capacitors is essential for enhancing the reliability and maintainability of power electronic systems. However, online RUL prediction remains a challenging task due to the difficulty of accessing internal degradation states and the non-stationarity of operating conditions. This paper presents a novel CNN-LSTM-Attention-based deep learning framework for accurate online RUL prediction of tantalum capacitors, leveraging infrared surface temperature measurements and ambient thermal compensation. The proposed framework initiates with the collection of degradation temperature data under controlled accelerated aging experiments, where true degradation indicators are extracted by eliminating ambient temperature interference through dual-sensor compensation. The resulting preprocessed data are used to train a hybrid deep neural network model that integrates convolutional layers for local feature extraction, long short-term memory (LSTM) units for sequential dependency modeling, and a soft attention mechanism to selectively focus on the critical degradation patterns. A channel attention module is further embedded to adaptively optimize the importance of different feature channels. Experimental validation using three groups of aging data demonstrates the effectiveness and superiority of the proposed method over conventional LSTM and CNN-LSTM baselines. The CNN-LSTM-Attention model achieves a substantial improvement in prediction accuracy, with mean absolute percentage error (MAPE) reductions of up to 60.97%, root mean squared error (RMSE) reductions of up to 65.63%, and coefficient of determination (R2) increases of up to 68.67%. The results confirm the ability to deliver precise and robust online RUL predictions for tantalum capacitors under complex operational conditions.

ElectronicsVol. 14(22)
University of Electronic Science and Technology of China (CN), Line Corporation (Japan) (JP)
National Natural Science Foundation of China
Openalex Percentile: Top 67%
Silicon Carbide Semiconductor Technologies
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