Optical Photon Number Resolving Detector by Parallel-Segmented Transition Edge Sensor with Single Bias Operation

Abstract We propose the parallel segmentation of the sensitive area of the optical transition edge sensor. The aim of parallel segmentation is to enhance the timing properties of the TES particularly in its rising edge by confining each heat diffusion event inside a segment and hence reducing the time required for the rise in resistance. All the segments are operated by a single voltage bias. We select iridium as its material and fabricated a two-segment device using photolithography and dry etching. The static characteristics were compared with a non-segmented device. We demonstrated the photon number resolving capability at the wavelength of 1547 nm and the parallel-segmented device exhibited an energy resolution of ΔE = 0.658 eV in FWHM using a SQUID readout. The electro-thermal simulations by finite difference method were performed to compare the timing properties among the different geometries including parallel-segmented structure.

Authors

Institutions

Publication Details

Journal
Journal of Low Temperature Physics
Published
2025-11-12
DOI
https://doi.org/10.1007/s10909-025-03342-y
Primary Topic
Integrated Circuits and Semiconductor Failure Analysis
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Optical Photon Number Resolving Detector by Parallel-Segmented Transition Edge Sensor with Single Bias Operation

Masahiro Iijima, Yuki Mitsuya, Hiroyuki R. Takahashi, M. Amin Choghadi
Journal of Low Temperature Physics
Integrated Circuits and Semiconductor Failure Analysis
article

Optical Photon Number Resolving Detector by Parallel-Segmented Transition Edge Sensor with Single Bias Operation

Masahiro Iijima, Yuki Mitsuya, Hiroyuki R. Takahashi, M. Amin Choghadi
article en

Abstract

Abstract We propose the parallel segmentation of the sensitive area of the optical transition edge sensor. The aim of parallel segmentation is to enhance the timing properties of the TES particularly in its rising edge by confining each heat diffusion event inside a segment and hence reducing the time required for the rise in resistance. All the segments are operated by a single voltage bias. We select iridium as its material and fabricated a two-segment device using photolithography and dry etching. The static characteristics were compared with a non-segmented device. We demonstrated the photon number resolving capability at the wavelength of 1547 nm and the parallel-segmented device exhibited an energy resolution of ΔE = 0.658 eV in FWHM using a SQUID readout. The electro-thermal simulations by finite difference method were performed to compare the timing properties among the different geometries including parallel-segmented structure.

Journal of Low Temperature PhysicsVol. 222(1)
The University of Tokyo (JP)
Ministry of Education, Culture, Sports, Science and Technology, Moonshot Research and Development Program
Openalex Percentile: Top 67%
Integrated Circuits and Semiconductor Failure Analysis
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Optical Photon Number Resolving Detector by Parallel-Segmented Transition Edge Sensor with Single Bias Operation — Masahiro Iijima, Yuki Mitsuya, et al. · Journal of Low Temperature Physics (2025) | TGRS Research Map | TGRS