Proximity-driven metallization of germanene on NiTe2 via interfacial coupling
Epitaxial germanene layers have been grown on a NiTe2 substrate, and their structural and electronic properties were systematically investigated using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. The as-grown germanene exhibits a honeycomb structure with a lattice constant of 3.9 Å and a (1 × 1) structure relative to the substrate lattice. The differential conductivity shows a V-shaped profile, characteristic of a two-dimensional Dirac system, with its minimum lying close to the Fermi level yet remaining non-zero. By combining STM observations with first-principles calculations, we attribute this phenomenon to charge transfer between the NiTe2 substrate and germanene, thereby leading to the emergence of a metallic state in germanene. This finding provides a valuable framework for understanding the interplay between structural and electronic properties in this system. Furthermore, these results lay a solid foundation for exploring potential applications of germanene and open up promising avenues for future research.
Authors
- Jianxin Zhong
- Jin Li (ORCID: https://orcid.org/0000-0003-0748-4274)
- Yundan Liu (ORCID: https://orcid.org/0000-0003-3989-2803)
- Dan Mu (ORCID: https://orcid.org/0000-0003-1303-4632)
Institutions
- University of Shanghai for Science and Technology (CN)
- Xiangtan University (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2025-11-10
- DOI
- https://doi.org/10.1063/5.0282568
- Primary Topic
- Topological Materials and Phenomena
- Type
- article
- Field-Weighted Citation Impact
- 0.00