Damage behavior of He‐irradiated amorphous SiC at high temperatures
Abstract This study investigates the damage behavior of He‐irradiated amorphous SiC at 750°C. Using transmission electron microscopy and high‐resolution transmission electron microscopy, He bubble formation, lattice defects, and recrystallization phenomena in amorphous SiC were investigated. Results show that He bubbles in amorphous SiC are smaller and more numerous than those in crystalline SiC. Empirical potential molecular dynamics simulations were carried out. It found that small He bubbles with the mean size of about 0.3 nm were easily formed in amorphous SiC. The study also reveals irradiation‐accelerated recrystallization of amorphous SiC at 750°C, driven by defect dynamics and atomic mobility. These findings highlight the role of structural disorder in mitigating He‐induced embrittlement and provide insights for designing SiC‐based materials for nuclear applications.
Authors
- Xiaodan Fei
- Jintao Zhang (ORCID: https://orcid.org/0000-0002-2922-6666)
- Boyu Wang (ORCID: https://orcid.org/0000-0001-8000-3700)
- Tongmin Zhang
- Anli Xiong
- Jiale Huang (ORCID: https://orcid.org/0000-0002-5743-0461)
- Jun Li (ORCID: https://orcid.org/0000-0002-8456-3980)
- Hao Wang (ORCID: https://orcid.org/0000-0001-7659-0519)
- Yang Wu (ORCID: https://orcid.org/0000-0003-0931-7648)
- L. L. Yan (ORCID: https://orcid.org/0000-0002-2244-4222)
- Bingsheng Li (ORCID: https://orcid.org/0009-0006-9679-2314)
- Guo Pu (ORCID: https://orcid.org/0009-0007-8229-8558)
- Fangfang Ge (ORCID: https://orcid.org/0000-0003-0699-2920)
- Liming Chen (ORCID: https://orcid.org/0009-0008-6861-7951)
Institutions
- Anhui Jianzhu University (CN)
- Southwest University of Science and Technology (CN)
- Chinese Academy of Sciences (CN)
- China General Nuclear Power Corporation (China) (CN)
- Institute of Modern Physics (CN)
- Puyang Vocational and Technical College (CN)
- Ningbo Institute of Industrial Technology (CN)
Publication Details
- Journal
- Journal of the American Ceramic Society
- Published
- 2025-11-11
- DOI
- https://doi.org/10.1111/jace.70367
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00