Multi‐Origin Driven Giant Planar Hall Effect in Topological Antiferromagnet EuAl <sub>2</sub> Si <sub>2</sub> with Tunable Spin Texture

Abstract In topological materials, the planar Hall effect (PHE) is often regarded as a hallmark of profound quantum phenomena—most notably the Adler‐Bell‐Jackiw chiral anomaly and Berry curvature—rendering it an indispensable tool for deciphering the topological essence of emergent phases. In this study, the PHE and anisotropic magnetoresistance (MR) is delved into the recently discovered layered topological antiferromagnet EuAl 2 Si 2 . The analysis of the robust PHE signal (≈3.8 µΩ cm at 2 K and 8 T) unveils a distinct interplay of mechanisms. While Berry curvature plays a minor role, the dominant contributions stem from classical orbital MR in the field‐induced ferromagnetic state and field‐suppressed spin fluctuations in the paramagnetic regime. These insights not only position EuAl 2 Si 2 —with its highly tunable spin texture—as an exemplary system for probing the intricate coupling between spin configurations and band topology in magnetotransport but also pave the way for designing novel materials with tailored PHE responses, highlighting significant application prospects in quantum sensing, spintronic devices, and topologically protected electronic systems.

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Publication Details

Journal
Advanced Functional Materials
Published
2025-11-10
DOI
https://doi.org/10.1002/adfm.202522699
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
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article

Multi‐Origin Driven Giant Planar Hall Effect in Topological Antiferromagnet EuAl 2 Si 2 with Tunable Spin Texture

Yanfeng Guo, Guanxiang Du, Xiangqi Liu, Bofeng Bai et al.
Advanced Functional Materials
Topological Materials and Phenomena
article

Multi‐Origin Driven Giant Planar Hall Effect in Topological Antiferromagnet EuAl 2 Si 2 with Tunable Spin Texture

Yanfeng Guo, Guanxiang Du, Xiangqi Liu, Bofeng Bai, Chuanying Xi, Leiming Chen, Jingcheng Huang, Wei Xia, Z. Q. Zhu, Li Pi, Wenbo Wang, Zhengyang Li, Yixuan Luo, Xia Wang
article en

Abstract

Abstract In topological materials, the planar Hall effect (PHE) is often regarded as a hallmark of profound quantum phenomena—most notably the Adler‐Bell‐Jackiw chiral anomaly and Berry curvature—rendering it an indispensable tool for deciphering the topological essence of emergent phases. In this study, the PHE and anisotropic magnetoresistance (MR) is delved into the recently discovered layered topological antiferromagnet EuAl 2 Si 2 . The analysis of the robust PHE signal (≈3.8 µΩ cm at 2 K and 8 T) unveils a distinct interplay of mechanisms. While Berry curvature plays a minor role, the dominant contributions stem from classical orbital MR in the field‐induced ferromagnetic state and field‐suppressed spin fluctuations in the paramagnetic regime. These insights not only position EuAl 2 Si 2 —with its highly tunable spin texture—as an exemplary system for probing the intricate coupling between spin configurations and band topology in magnetotransport but also pave the way for designing novel materials with tailored PHE responses, highlighting significant application prospects in quantum sensing, spintronic devices, and topologically protected electronic systems.

Advanced Functional MaterialsVol. 36(14)
Zhengzhou University of Aeronautics (CN), Hefei Institutes of Physical Science (CN), ShanghaiTech University (CN), Nanjing University of Posts and Telecommunications (CN), High Magnetic Field Laboratory (CN)
Openalex Percentile: Top 73%
Topological Materials and Phenomena
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