Efficient, Non‐Destructive Transfer of Wafer‐Scale Monolayer MoS ₂ by Interface Engineering

Abstract 2D layered materials with atomic thicknesses and dangling‐bond‐free flat surfaces hold great potential to overcome the fundamental challenges of current silicon technology, and to develop completely new device architectures and functionalities. Although notable progress in the synthesis of wafer‐scale 2D materials has been witnessed over the past few years, wafer‐scale transfer of 2D materials from the grown substrates to target substrates faces challenges in terms of mechanical damage, surface contamination, and inefficiencies. Here, the efficient, non‐destructive transfer of 2‐inch monolayer MoS 2 wafers grown on sapphire to arbitrary substrates by interface engineering is demonstrated. Via pretreating sapphire with polydimethylsiloxane, a wafer‐scale monolayer MoS 2 with extremely weak bonding to substrates is synthesized. The strongly reduced interactions between MoS 2 and sapphire substrates facilitate the wafer‐scale transfer of the as‐grown monolayer MoS 2 to both rigid and flexible substrates in an efficient, non‐destructive manner. Benefiting from the damage‐free transfer, the fabricated field‐effect transistors display outstanding electrical performances and high yield. Further, layer‐by‐layer stacking of large scale MoS 2 homostructures with twist‐angle control is demonstrated. The work offers an interface engineering solution to the formidable challenges of wafer‐scale transfer of 2D materials, paving the way toward 2D technology from lab to fab.