Structural Design and Experimental Investigation of a 1.65 µm Tapered Semiconductor Laser with InGaAlAs MQWs (On InP)

This paper presents the design and fabrication of a 1.65 μm tapered semiconductor laser based on an InGaAlAs multiple quantum well structure (grown) on InP. Through theoretical modeling and parametric optimization simulations, it was established that an etching depth of 0.8 μm for the ridge waveguide and a taper angle of 6° effectively confine the optical field and suppress high-order mode lasing. Based on these optimized parameters, a tapered semiconductor laser with a ridge width of 2 μm and a cavity length of 2000 μm was successfully fabricated. Systematic characterization was conducted under continuous-wave operation at 25 °C. The device exhibits outstanding overall performance: a maximum continuous-wave output power of 19.3 mW, a peak wavelength of 1653 nm, a spectral line width of 0.793 nm, and a side-mode suppression ratio (SMSR) as high as 49 dB, demonstrating excellent spectral purity. Far-field measurements further reveal that at an injection current of 30 mA, the vertical and horizontal far-field divergence angles are 41.02° and 15.26°, respectively, with a well-defined Gaussian beam profile. This study provides an effective technical approach for the design and fabrication of high-performance semiconductor lasers in the 1.65 μm band. The developed device shows significant potential for applications in free-space optical communication, LiDAR, and gas sensing.