Revealing hidden interlayer excitons in 2D bilayers via hybrid molecular gating

Heterostructures of molecules and two-dimensional materials feature emergent properties not seen in their individual components. Here, we study excitons in bilayer transition metal dichalcogenides exposed to an intense electric field produced by charge transfer from proximal molecules. Our approach allows for reaching an electric field strength of 0.35 V nm<sup>-1</sup>, up to a factor of two higher than previously achieved in purely solid-state gated devices. Under this field, inter- and intralayer excitons are brought into an energetic resonance, allowing us to explore a new physical regime. We detect a previously unseen interlayer exciton that only becomes visible at high electric field through hybridization with the intralayer A exciton. Moreover, the system experiences an ultra-strong Stark splitting of > 350 meV with exciton energies tunable over a large range of the optical spectrum, holding potential for optoelectronics. Our work paves the way for using strong electric fields to study new physical phenomena and control exciton hybridization in 2D semiconductors.

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Publication Details

Journal
Nature Communications
Published
2025-11-10
DOI
https://doi.org/10.1038/s41467-025-65431-6
Citations
3
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
1.55

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article

Revealing hidden interlayer excitons in 2D bilayers via hybrid molecular gating

Sviatoslav Kovalchuk, Malte Selig, Dominik Christiansen, Abhijeet M. Kumar et al.
3 citations
Nature Communications
2D Materials and Applications
1.55
article

Revealing hidden interlayer excitons in 2D bilayers via hybrid molecular gating

Sviatoslav Kovalchuk, Malte Selig, Dominik Christiansen, Abhijeet M. Kumar, Siegfried Eigler, Qing Cao, Takashi Taniguchi, Kenji Watanabe, Simon Pessel, Kyrylo Greben, Jan Soyka, Kirill I. Bolotin, Andreas Knorr
article en
3 citations

Abstract

Heterostructures of molecules and two-dimensional materials feature emergent properties not seen in their individual components. Here, we study excitons in bilayer transition metal dichalcogenides exposed to an intense electric field produced by charge transfer from proximal molecules. Our approach allows for reaching an electric field strength of 0.35 V nm<sup>-1</sup>, up to a factor of two higher than previously achieved in purely solid-state gated devices. Under this field, inter- and intralayer excitons are brought into an energetic resonance, allowing us to explore a new physical regime. We detect a previously unseen interlayer exciton that only becomes visible at high electric field through hybridization with the intralayer A exciton. Moreover, the system experiences an ultra-strong Stark splitting of > 350 meV with exciton energies tunable over a large range of the optical spectrum, holding potential for optoelectronics. Our work paves the way for using strong electric fields to study new physical phenomena and control exciton hybridization in 2D semiconductors.

Nature CommunicationsVol. 16(1)
National Institute for Materials Science (JP), Technische Universität Berlin (DE), Freie Universität Berlin (DE)
Deutsche Forschungsgemeinschaft, Bundesministerium für Bildung und Forschung
Openalex Percentile: Top 16%
2D Materials and Applications
1.55
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