MOCVD Growth of Relaxed, Crack-Free AlGaN on Tiled GaN Substrates
AlxGa1-xN layers with up to 53% Al composition and 1.3 µm total thicknesses were grown utilizing step-graded layers on dense arrays of 10 × 10 µm2 GaN tiles. While the layers were fully relaxed and crack-free, the higher Al composition sample showed increased X-ray line width, which did not correlate with a lack of increased dislocation density (as measured by TEM).
Authors
- S. Keller (ORCID: https://orcid.org/0000-0002-6529-3516)
- Nirupam Hatui (ORCID: https://orcid.org/0000-0002-8848-3312)
- Umesh K. Mishra (ORCID: https://orcid.org/0000-0001-8084-9247)
- Emmanuel Kayede (ORCID: https://orcid.org/0000-0003-4348-508X)
- Henry Collins (ORCID: https://orcid.org/0000-0001-9918-5700)
- Feng Wu (ORCID: https://orcid.org/0000-0002-9877-6426)
Institutions
- University of California, Santa Barbara (US)
Publication Details
- Journal
- Crystals
- Published
- 2025-11-08
- DOI
- https://doi.org/10.3390/cryst15110965
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00