AlN Passivation-Enhanced Mg-Doped β-Ga2O3 MISIM Photodetectors for Highly Responsive Solar-Blind UV Detection

Mg-doped gallium oxide films were prepared on single crystal sapphire substrates through radio frequency magnetron sputtering technology, and then AlN films of different thicknesses were deposited on them as passivation layers. Finally, Pt interdigitated electrodes were prepared through mask plate and ion sputtering technology to make metal–insulator–semiconductor–insulator–metal (MISIM) photodetectors. The influence of the AlN passivation layer on the optical properties and photodetection performance of the device was investigated using UV-Vis (ultraviolet-visible absorption spectroscopy) spectrophotometer and a Keith 4200 semiconductor tester. The device’s performance was significantly enhanced. Among them, the MISIM-structured device achieves a responsivity of 2.17 A/W, an external quantum efficiency (EQE) of 1100%, a specific detectivity (D*) of 1.09 × 1012 Jones, and a photo-to-dark current ratio (PDCR) of 2200. The results show that different thicknesses of AlN passivation layers have an effect on the detection performance of Mg-doped β-Ga2O3 films in the UV detection of the solar-blind UV region. The AlN’s thickness has little effect on the bandgap when it is 3 nm and 5 nm, and the bandgap increases at 10 nm. The transmittance of the film increases with the increase in AlN thickness and decreases when the AlN’s thickness increases to 10 nm. The photocurrent exhibits a non-monotonic dependence on AlN thickness at 10 V, and the dark current gradually decreases. The thickness of the AlN passivation layer also has a significant impact on the response characteristics of the detector, and the response characteristics of the device are best when the thickness of the AlN passivation layer is 5 nm. The responsiveness, detection rate, and external quantum efficiency of the device first increase and then decrease with the thickness of the AlN layer, and comprehensive performance is best when the thickness of the AlN passivation layer is 5 nm. The reason is that the AlN layer plays a passivating role on the surface of Ga2O3 films, reducing surface defects and inhibiting its capture of photogenerated carriers, while the appropriate thickness of the AlN layer increases the barrier height at the semiconductor interface, forming a built-in electric field and improving the response speed. Finally, the AlN layer inhibits the adsorption and desorption processes between the photogenerated electron–hole pair and O2, thereby retaining more photogenerated non-equilibrium carriers, which also helps enhance photoelectric detection performance.